型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube49111+￥38.100610+￥35.9145100+￥34.2905250+￥34.0407500+￥33.79091000+￥33.50982500+￥33.26005000+￥33.1038 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 50A 122000mW 3Pin(2+Tab) LDPAK(S)-1 T/R41895+￥14.671850+￥14.0448200+￥13.6937500+￥13.60591000+￥13.51812500+￥13.41785000+￥13.35517500+￥13.2924 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 500V 45000mW 3Pin(3+Tab) TO-220FL Tube66721+￥47.531210+￥44.8040100+￥42.7781250+￥42.4664500+￥42.15471000+￥41.80412500+￥41.49245000+￥41.2976 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 45A 40000mW 3Pin(3+Tab) TO-3PFM Tube93285+￥28.758650+￥27.5296200+￥26.8414500+￥26.66931000+￥26.49722500+￥26.30065000+￥26.17777500+￥26.0548 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 60A 41200mW 3Pin(3+Tab) TO-3PFM Tube18741+￥48.922010+￥46.1150100+￥44.0298250+￥43.7090500+￥43.38821000+￥43.02732500+￥42.70655000+￥42.5060 -
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品类: IGBT晶体管描述: IGBT 晶体管 Strobe IGBT35005+￥6.331525+￥5.862550+￥5.5342100+￥5.3935500+￥5.29972500+￥5.18255000+￥5.135610000+￥5.0652 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 25A 63000mW 3Pin(2+Tab) LDPAK(S)-1 T/R350610+￥9.7920100+￥9.3024500+￥8.97601000+￥8.95972000+￥8.89445000+￥8.81287500+￥8.747510000+￥8.7149 -
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品类: IGBT晶体管描述: IGBT 分立，Renesas Electronics ### IGBT（绝缘栅双极型晶体管）分立和模块 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。55475+￥29.437250+￥28.1792200+￥27.4747500+￥27.29861000+￥27.12252500+￥26.92125000+￥26.79547500+￥26.6696 -
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品类: IGBT晶体管描述: IGBT 晶体管 IGBT80471+￥43.041610+￥40.5720100+￥38.7374250+￥38.4552500+￥38.17301000+￥37.85542500+￥37.57325000+￥37.3968 -
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品类: IGBT晶体管描述: * Low collector to emitter saturation voltage * VCE(sat) = 1.35V typ. (at IC = 50A, VGE = 15V, Ta = 25℃) * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74ns typ. (at IC = 30A, VCE = 400V, VGE = 15V, Rg = 5Ω, Ta = 25℃, inductive load)59721+￥55.241610+￥52.0720100+￥49.7174250+￥49.3552500+￥48.99301000+￥48.58542500+￥48.22325000+￥47.9968 -
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品类: IGBT晶体管描述: 硅N沟道IGBT高速电源开关 Silicon N Channel IGBT High Speed Power Switching43585+￥29.133050+￥27.8880200+￥27.1908500+￥27.01651000+￥26.84222500+￥26.64305000+￥26.51857500+￥26.3940 -
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品类: IGBT晶体管描述: RENESAS RJH60F7DPQ-A0#T0 单晶体管, IGBT, 90 A, 1.6 V, 328.9 W, 600 V, TO-247, 3 引脚14131+￥226.883510+￥220.964850+￥216.4271100+￥214.8488200+￥213.6651500+￥212.08681000+￥211.10032000+￥210.1139 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 16A 52000mW 3Pin(2+Tab) LDPAK(S)-1 T/R670610+￥9.1440100+￥8.6868500+￥8.38201000+￥8.36682000+￥8.30585000+￥8.22967500+￥8.168610000+￥8.1382 -
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品类: IGBT晶体管描述: IGBT 晶体管 IGBT70521+￥48.482810+￥45.7010100+￥43.6345250+￥43.3166500+￥42.99871000+￥42.64102500+￥42.32315000+￥42.1244 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 1200V 50A 192300mW 3Pin(3+Tab) TO-247 Tube27001+￥393.587510+￥383.320050+￥375.4483100+￥372.7103200+￥370.6568500+￥367.91881000+￥366.20752000+￥364.4963 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 1.1kV 35A 3Pin TO-3P58301+￥57.879510+￥55.3630100+￥54.9100250+￥54.5577500+￥54.00411000+￥53.75242500+￥53.40015000+￥53.0982 -
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品类: IGBT晶体管描述: IGBT 晶体管 IGBT40541+￥45.335210+￥42.7340100+￥40.8017250+￥40.5044500+￥40.20711000+￥39.87272500+￥39.57545000+￥39.3896 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 60A 235800mW 3Pin(3+Tab) TO-3P28591+￥39.198610+￥36.9495100+￥35.2787250+￥35.0217500+￥34.76471000+￥34.47552500+￥34.21855000+￥34.0578 -
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品类: IGBT晶体管描述: IGBT 分立，Renesas Electronics ### IGBT（绝缘栅双极型晶体管）分立和模块 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。14571+￥43.456410+￥40.9630100+￥39.1108250+￥38.8258500+￥38.54081000+￥38.22032500+￥37.93535000+￥37.7572 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 1350V 60A 250000mW 3Pin(3+Tab) TO-247 Tube46475+￥24.230750+￥23.1952200+￥22.6153500+￥22.47041000+￥22.32542500+￥22.15975000+￥22.05627500+￥21.9526 -
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 45A 3Pin TO-247 Tube64575+￥16.497050+￥15.7920200+￥15.3972500+￥15.29851000+￥15.19982500+￥15.08705000+￥15.01657500+￥14.9460
